1966709

MIL MIL-PRF-19500/685E

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR

standard by Military Specifications and Standards , 04/22/2010

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Full Description

This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications.. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions.
 

Product Details

Published:
04/22/2010
Number of Pages:
22
File Size:
1 file , 300 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/685H


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685G)

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  2. MIL MIL-PRF-19500/685G


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685F)

    • Historical Version

  3. MIL MIL-PRF-19500/685F


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685E)

    • Historical Version

  4. MIL MIL-PRF-19500/685E

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    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR

    • Historical Version

  5. MIL MIL-PRF-19500/685D


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR(SUPERSEDING MIL-PRF-19500/685B)

    • Historical Version

  6. MIL MIL-PRF-19500/685B


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685A)(S/S BY MIL-PRF-19500/685D)

    • Historical Version

  7. MIL MIL-PRF-19500/685A


    SEMICONDUCTOR DEVICE, FILED EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685) (S/S BY MIL-PRF-19500/685B)

    • Historical Version

  8. MIL MIL-PRF-19500/685


    SEMICONDUTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR (S/S BY MIL-PRF-19500/685A)

    • Historical Version