1941221

MIL MIL-PRF-19500/685H

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685G)

standard by Military Specifications and Standards , 11/18/2016

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Full Description

MIL-PRF-19500/685H covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions.
 

Product Details

Published:
11/18/2016
Number of Pages:
24
File Size:
1 file , 390 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/685H

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    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685G)

    • Most Recent

  2. MIL MIL-PRF-19500/685G


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685F)

    • Historical Version

  3. MIL MIL-PRF-19500/685F


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685E)

    • Historical Version

  4. MIL MIL-PRF-19500/685E


    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR

    • Historical Version

  5. MIL MIL-PRF-19500/685D


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR(SUPERSEDING MIL-PRF-19500/685B)

    • Historical Version

  6. MIL MIL-PRF-19500/685B


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685A)(S/S BY MIL-PRF-19500/685D)

    • Historical Version

  7. MIL MIL-PRF-19500/685A


    SEMICONDUCTOR DEVICE, FILED EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685) (S/S BY MIL-PRF-19500/685B)

    • Historical Version

  8. MIL MIL-PRF-19500/685


    SEMICONDUTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR (S/S BY MIL-PRF-19500/685A)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/685H Amendment 2


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685G)

  2. MIL MIL-PRF-19500/685H Amendment 1


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR

  3. MIL MIL-PRF-19500/685H Amendment 3


    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR