1775266

JEDEC JESD24-12

THERMAL IMPEDANCE MEASUREMENT FOR INSULATED GATE BIPOLAR TRANSISTORS - (Delta VCE(on) Method)

Amendment by JEDEC Solid State Technology Association , 06/01/2004

This document is an amendment. View the base document.

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Full Description

The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.
 

Product Details

Published:
06/01/2004
File Size:
1 file , 470 KB
Note:
This product is unavailable in Russia, Ukraine, Belarus