1966827

MIL MIL-PRF-19500/733F

Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

standard by Military Specifications and Standards , 06/09/2016

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Full Description

This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels (‰ÛÏR‰Û and ‰ÛÏF‰Û) are provided for JANTXV and JANS product assurance levels.
 

Product Details

Published:
06/09/2016
Number of Pages:
31
File Size:
1 file , 660 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/733F

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    Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

    • Most Recent

  2. MIL MIL-PRF-19500/733E


    Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

    • Historical Version

  3. MIL MIL-PRF-19500/733D


    Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

    • Historical Version

  4. MIL MIL-PRF-19500/733C


    Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

    • Historical Version

  5. MIL MIL-PRF-19500/733B


    Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

    • Historical Version

  6. MIL MIL-PRF-19500/733A


    Semiconductor Device, Field Effect Radiation Hardened(Total Dose and Single Event Effects)Transistors, P-Channel, Silicon, Types 2N7523T1, 2N7523U2, 2N7524T1, and 2N7524U2,JANTXVR, F and JANSR, F

    • Historical Version

  7. MIL MIL-PRF-19500/733


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/733F Amendment 1


    Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F

  2. MIL MIL-PRF-19500/733F Amendment 2


    Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F