1966697

MIL MIL-PRF-19500/683C Amendment 1 (amendment incorporated)

Transistor, Field Effect, N-Channel Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Type 2N7467, JANTXVR, F, G, and H and JANSR, F, G, and H

Amendment by Military Specifications and Standards , 11/05/2009

This document is an amendment. View the base document.

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This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G"|and "H") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
 

Product Details

Published:
11/05/2009
Number of Pages:
18
File Size:
1 file , 200 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus