1946988

MIL MIL-PRF-19500/615H

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R (SUPERSEDING MIL-PRF-19500/615G)

standard by Military Specifications and Standards , 01/18/2017

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Full Description

MIL-PRF-19500/615H covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels ("M", "D", "R" and "F") are provided for JANTXV product assurance level. See 6.7 for JANHC and JANKC die versions.
 

Product Details

Published:
01/18/2017
Number of Pages:
24
File Size:
1 file , 350 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/615H

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    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R (SUPERSEDING MIL-PRF-19500/615G)

    • Most Recent

  2. MIL MIL-PRF-19500/615D


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F(SUPERSEDING MIL-PRF-19500/615C)

    • Historical Version

  3. MIL MIL-PRF-19500/615C


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATIN HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F (SUPERSEDING MIL-PRF-19500/615B)(S/S BY MIL-PRF-19500/615D)

    • Historical Version

  4. MIL MIL-PRF-19500/615B


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 (SUPERSEDING MIL-S-19500/615A) (S/S BY MIL-PRF-19500/615C)

    • Historical Version

  5. MIL MIL-PRF-19500/615A


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R (SUPERSEDING MIL-S-19500/615)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/615H Amendment 2


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R

  2. MIL MIL-PRF-19500/615H Amendment 1


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R