1966540

MIL MIL-PRF-19500/586L

Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, and 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

standard by Military Specifications and Standards , 03/26/2014

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Full Description

This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices (die) as specified in MIL-PRF-19500.
 

Product Details

Published:
03/26/2014
Number of Pages:
23
File Size:
1 file , 600 KB
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This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/586M


    Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, and 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

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  2. MIL MIL-PRF-19500/586L

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    Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, and 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

    • Historical Version

  3. MIL MIL-PRF-19500/586K


    Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, and 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

    • Historical Version

  4. MIL MIL-PRF-19500/586J


    Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, and 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

    • Historical Version

  5. MIL MIL-PRF-19500/586G


    SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC(SUPERSEDING MIL-PRF-19500/586F)

    • Historical Version

  6. MIL MIL-PRF-19500/586F


    SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC (SUPERSEDING MIL-PRF-19500/586E)(S/S BY MIL-PRF-19500/586G)

    • Historical Version

  7. MIL MIL-PRF-19500/586E


    SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES 1N5819-1, 1N5819UR-1, 1N6761-1 AND 1N6761UR-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC (SUPERSEDING MIL-PRF-19500/586D AND DESC 89102A) (S/S BY MIL-PRF-19500/586F)

    • Historical Version

  8. MIL MIL-PRF-19500/586D


    SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES 1N5819-1, 1N5819UR-1, 1N6650-1, 1N6650UR-1, 1N676-1 AND 1N6761UR-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC (SUPERSEDING MIL-PRF-19500/586C) (S/S BY MIL-PRF-19500/586E)

    • Historical Version

  9. MIL MIL-PRF-19500/586C


    SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N5819-1, AND IN6650UR-1, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/586B) (S/S BY MIL-PRF-19500/586D)

    • Historical Version