1909887

JEDEC JESD241

Procedure for Wafer-Level DC Characterization of Bias Temperature Instabilities

standard by JEDEC Solid State Technology Association , 12/01/2015

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Full Description

This Bias Temperature Instability (BTI) stress/test procedure is proposed to provide a minimum recommendation for a simple and consistent comparison of the mean threshold voltage (Vth) BTI induced shift. The procedure enables comparison of stable and manufacturable CMOS processes and technologies in which the process variation is low and the yield is mature. Qualification and accept-reject criteria are not given in this document.
 

Product Details

Published:
12/01/2015
Number of Pages:
32
File Size:
1 file , 580 KB
Note:
This product is unavailable in Russia, Ukraine, Belarus