1616923

ISO 23812:2009

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials

standard by International Organization for Standardization , 04/15/2009

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Full Description

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

 

Product Details

Published:
04/15/2009
File Size:
1 file , 470 KB
Same As:
BS ISO 23812:2009, BS ISO 23812:2009
Note:
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