1031067

ISO 17560:2002

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon

standard by International Organization for Standardization , 07/15/2002

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ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.

 

Product Details

Published:
07/15/2002
Number of Pages:
10
File Size:
1 file , 460 KB
Same As:
BS ISO 17560:2002, BS ISO 17560:2002
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. ISO 17560:2014


    Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon

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  2. ISO 17560:2002

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    Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon

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