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Modify the present FGA standard to include floating gate "flash" EEPROM's that use Fowler-Nordheim tunneling and/or hot electron injection programming techniques. Hot electron injection EPROM's are included for completeness.
Revision Standard - Inactive-Withdrawn. This standard describes the underlying physics and the operation of floating gate memory arrays, specifically, UV erasable EPROM, byte rewritable E 2 PROMs, and block rewritableflash EEPROMs. In addition, reliability hazards are covered with focus on retention, endurance,and disturb. There are also clauses on the issues of testing floating gate arrays and their hardness to ionizing radiation.