1805222

IEC 62047-9 Ed. 1.0 b:2011

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

standard by International Electrotechnical Commission , 07/13/2011

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Full Description

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters.
 

Product Details

Edition:
1.0
Published:
07/13/2011
Number of Pages:
49
File Size:
1 file , 680 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus, Canada
 

Amendments, rulings, supplements, and errata

  1. IEC 62047-9 Ed. 1.0 b COR.1:2012

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    Corrigendum 1 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS