1084438

ASTM F1725-02 [ Withdrawn ]

Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003)

standard by ASTM International , 12/10/2002

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Full Description

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting.

1.2 This practice is suitable for use if evaluating silicon grown in either [111] or [100] direction and doped either p or n type with resistivity greater than 0.005 Ωcm.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

 

Product Details

Published:
12/10/2002
Number of Pages:
3
File Size:
1 file , 36 KB
Note:
This product is unavailable in Russia, Ukraine, Belarus
 

Document History

  1. ASTM F1725-02

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    Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003)

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  2. ASTM F1725-97


    Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots

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