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About This Item

 

Full Description

This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications.
 

Document History

  1. MIL MIL-PRF-19500/705E

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    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR

    • Most Recent
  2. MIL MIL-PRF-19500/705D


    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR

    • Historical Version
  3. MIL MIL-PRF-19500/705C


    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR

    • Historical Version
  4. MIL MIL-PRF-19500/705A


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/705)

    • Historical Version
  5. MIL MIL-PRF-19500/705


    SEMICODUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED(TOTAL DOSE AND SINGLE EVENT EFFECTS)TRANSISTOR, N0CHANNEL, SILICON TYPES 2N7488T3 - 2N7490T3 JANTXVR AND JANSR (S/S BY MIL-PRF-19500/705A)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/705E Amendment 1


    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR