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About This Item

 

Full Description

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions.
 

Document History

  1. MIL MIL-PRF-19500/697F

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    Transistor, Field Effect, Radiation Hardened, N-Channel, Device Type 2N7478T1, JANTXVR, F, G, and H and JANSR, F, G, and H

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  2. MIL MIL-PRF-19500/697E


    Transistor, Field Effect, Radiation Hardened, N-Channel, Device Type 2N7478T1, JANTXVR, F, G, and H and JANSR, F, G, and H

    • Historical Version
  3. MIL MIL-PRF-19500/697D


    Transistor, Field Effect, Radiation Hardened, N-Channel, Device Type 2N7478T1, JANTXVR, F, G, and H and JANSR, F, G, and H

    • Historical Version
  4. MIL MIL-PRF-19500/697C


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H(SUPERSEDING MIL-PRF-19500/697B)

    • Historical Version
  5. MIL MIL-PRF-19500/697A


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H (SUPERSEDING MIL-PRF-19500/697)

    • Historical Version
  6. MIL MIL-PRF-19500/697


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7478T1 JANTXVR, F, G, AND J AND JANSR, F, G, AND H (S/S BY MIL-PRF-19500/697A)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/697F Amendment 1


    Transistor, Field Effect, Radiation Hardened, N-Channel, Device Type 2N7478T1, JANTXVR, F, G, and H and JANSR, F, G, and H