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This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc.
 

Document History

  1. JEDEC JEP122H

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    Failure Mechanisms and Models for Semiconductor Devices

    • Most Recent
  2. JEDEC JEP122G


    FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES

    • Historical Version
  3. JEDEC JEP 122F


    FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES

    • Historical Version
  4. JEDEC JEP 122E


    FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES

    • Historical Version