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About This Item

 

Full Description

This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each encapsulated device type (JANTXV and JANS) as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 foR unencapsulated devices, JANHC and JANKC die versions.
 

Document History

  1. MIL MIL-PRF-19500/743C

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    Transistor, Field Effect, N-Channel, Radiation Hardened Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F, G and H and JANSR, F, G and H

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  2. MIL MIL-PRF-19500/743B


    Transistor, Field Effect, N-Channel, Radiation Hardened Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F, G and H and JANSR, F, G and H

    • Historical Version
  3. MIL MIL-PRF-19500/743


    Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F and G and JANSR, F and G

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/743C Amendment 1


    Transistor, Field Effect, N-Channel, Radiation Hardened Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F, G and H and JANSR, F, G and H