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This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to five radiation levels ("M", "D", "P", "L", "R") are provided for JANTXV and JANS product assurance levels.
 

Document History

  1. MIL MIL-PRF-19500/692B

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    Transistor, Field Effect, N-Channel, Silicon, Types 2N7515, 2N7516, and 2N7517, JANTXV and JANS

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  2. MIL MIL-PRF-19500/692A


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATIN HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXVD, R, AND JANSR, R (SUPERSEDING MIL-PRF-19500/692)

    • Historical Version
  3. MIL MIL-PRF-19500/692


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7515, 2N7516, AND 2N7517 JANTXVD, R AND JANSD, R (S/S BY MIL-PRF-19500/692A)

    • Historical Version