1966675

MIL MIL-PRF-19500/673A Amendment 1

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7468 and 2N7469 JANTXVR, F, G and H and JANSR, F, G and H

Amendment by Military Specifications and Standards , 11/05/2009

This document is an amendment. View the base document.

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This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (Eas) and maximum avalanche current (Ias). Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G" and "H") are provided for JANS and JANTXV product assurance levels.
 

Product Details

Published:
11/05/2009
Number of Pages:
20
File Size:
1 file , 230 KB
Note:
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