1942260

MIL MIL-PRF-19500/159P

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN (SUPERSEDING MIL-PRF-19500/159N)

standard by Military Specifications and Standards , 02/04/2009

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Full Description

MIL MIL-PRF-19500/159N covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.
 

Product Details

Published:
02/04/2009
Number of Pages:
18
File Size:
1 file , 170 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/159P

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    SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN (SUPERSEDING MIL-PRF-19500/159N)

    • Most Recent

  2. MIL MIL-PRF-19500/159N


    SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN (SUPERSEDING MIL-PRF-19500/159M)

    • Historical Version

  3. MIL MIL-PRF-19500/159M


    SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN (SUPERSEDING MIL-PRF-19500/159L)

    • Historical Version

  4. MIL MIL-PRF-19500/159L


    SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1 (SUPERSEDING MIL-PRF-19500/159K)

    • Historical Version

  5. MIL MIL-PRF-19500/159K


    SEMICONDUCTOR DEV,DIODE,SILICON,VOLTAGE-REF,TYPES 1N821,1N823,1N825,1N827,1N829,1N821-1,1N823-1,1N825-1,1N827-1,1N829- JANS, JANHC AND JANKC (SUPERSEDING MIL-PRF-19500/159J)

    • Historical Version

  6. MIL MIL-PRF-19500/159J


    SEMICONDUCTOR DEV,DIODE,SILICON, VOLTAGE-REF TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1,1N827UR-1,1N829UR-1,JAN,JANTX,JANTXV,JANS, JANHC, JANKC (SUPERSEDING MIL-S-19500/159H)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/159P Notice 1 - Amendment 1


    SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN (SUPERSEDING MIL-PRF-19500/159N)