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Full Description

This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.

Cross References:
ISO/IEC GUIDE 98-3:2008 Ed 1
ISO 23833:2013
ISO 16700:2016
ISO 22493:2014


All current amendments available at time of purchase are included with the purchase of this document.