1882067

ISO 14706:2014

Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

standard by International Organization for Standardization , 08/01/2014

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Full Description

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

 

Product Details

Published:
08/01/2014
Number of Pages:
32
File Size:
1 file , 860 KB
Same As:
BS ISO 14706:2014
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This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. ISO 14706:2014

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    Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

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  2. ISO 14706:2000


    Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

    • Historical Version