1754673

ISO 12406:2010

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon

standard by International Organization for Standardization , 11/15/2010

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Full Description

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

 

Product Details

Published:
11/15/2010
File Size:
1 file , 400 KB
Same As:
BS ISO 12406:2010, BS ISO 12406:2010
Note:
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